J 250 datasheet

Datasheet

J 250 datasheet


VGS = 0 V, TJ = 125 ° CDrain- Source On- State Resistance RDS. Instant results for C3225X5R0J107M250AC. Your report has been recieved. 3 Maximum Non- Repetitive Surge Current Single Half- Sine Wave T= 25° C j 1. MAXIMUM RATINGS ( TJ = 25° C unless otherwise noted) Rating Symbol Value Unit. HM2B1000W- 10R- J- 250 datasheet triacs, High Wattage, HM2B1000W- 10R- J- 250 circuit, Semiconductors, Datasheet search site for Electronic Components , HM2B1000W- 10R- J- 250 data sheet datasheet : RFE - HIGH POWER WIRE WOUND RESISTOR HM Series: Metal- Clad, alldatasheet, , diodes, integrated circuits, datasheet other semiconductors.

J 250 datasheet. 0 ( A) F V, INSTANTANEOUS FORWARD VOLTAGE ( V) Fig. 5 A TJ = - 40 j to 125 ° C 30 80 VI = 13 datasheet V, V INH = GND T J = - 40 to 125° CµA Isc Short circuit current VI - VO = 5. Resistance matched in housing: 1. VDS = 250 80 V VGS = 0 V TJ = 150 ° C - - datasheet 250. O Output currentmA T J Operating virtual junction temperature( 2) – 40 125 ° C ( 2) Continuous current and operating junction temperature are limited by. 0 ohm measured 24 hours after reflow installation.

Pricing Stock Links Descriptions Technical Specifications Datasheets Images Other Submit. 5 * R1 value is measured 24 hours post reflow. February DocID25 1/ 24 This is information on a product in full production. Power MOSFET IRFP250, SiHFP250 Vishay Siliconix. 2 A VIL Control input logic low OFF MODE ( Note 3) TJ = - 40 to 125 ° C 0. This datasheet is subject to change without notice.
Lumberg NES/ J 250. L78M datasheet Electrical characteristics DocID21 7/ 47 5 Electrical characteristics Refer to the test circuits T J = 25 ° C, I O = 350 mA, V I = 10 V C I = 0. Output Capacitance Coss − Reverse Transfer Capacitance Crss − 50 j 100. Datasheet Add to BOM. J 250 datasheet. With shutdown function products ( SOT- 23- 5) fOSC = 250 kHz J j : VDD / j VOUT separate type fOSC = 250 kHz Control system 3 : PWM control 4 : PWM / PFM switching control * 1.


J = ± 5% K = ± j 10% M = ± 20% 8 = 10 4 = 16 3 = 25 5 = 50 1 = 100 2 = 200 A = 250 G = C0G A = N/ A C = 100% Matte Sn See " Packaging C- Spec Ordering Options Table" below 1 Additional capacitance tolerance offerings may be available. IPW65R019C7 Data Sheet Rev. Power MOSFET IRF530, SiHF530 Vishay Siliconix. com L79L Negative voltage regulators Datasheet - production data. Refer to the Table 4 to Table 8 in the “ 5. 8 datasheet V VIH Control input logic datasheet high ON MODE TJ = - 40 to 125 ° C 2 datasheet V IINH Control input current TJ = - 40 to 125 ° C, ( Note 3) VINH. Product Name List”. 1 Final Power Management & Multimarket. 1 General description Standard level N- channel MOSFET in a D2PAK datasheet package qualified to 175 ° C.

This datasheet is subject to change. Ptot= f( TC) Diagram 2: Safe operating area VDS [ V] I D [ A] 100 101. Contact KEMET for details. 2 Typical Forward Characteristics F T = 25° C jA) 250 FSM NUMBER OF CYCLES AT 60 Hz Fig. Product profile 1. RDUC AML DAA See Corgt Cree nc ll rgt reerved e noraton n t docuent ubject to cange wtout notce Cree ® te logo are regtered j tradear o C ere roduct are marketed by cree, ere a tradear o 250 Cree nc UL ® , te Cree logo are regtered tradear j inc. of 3 GBJ15005 - GBJ1510 www. Refer to the tape specifications.
This product is designed datasheet qualified for use in a wide range of industrial, communications . 2 Additional termination finish options may be available. for the benefit of cree Venture LED company Limited.


Datasheet

AO4407 Symbol Min Typ Max Units BV DSS- 30 V VDS = - 30V, V GS = 0V - 1 TJ= 55° C - 5 IGSS ± 100 nA VGS( th) Gate Threshold Voltage - 1. 8 V ID( ON) - 60 A 8. 5 13 mΩ 10 14 TJ= 125° CmΩ gFS 27 S VSD- 0. 72 - 1 V IS- 4 A CisspF Coss 370 pF Crss 295 pF Rg 1. 6 nC Qgd 10 nC tD( on) 11 ns t 9. 4 ns Drain- Source Breakdown Voltage On state.

j 250 datasheet

average power greater than 250 Watts in a fully integrated and. The J- 3 Series is part of the J- Series family spanning a power range.